High Frequency Optical Receivers.
Abstract
A 44 GHz optical receiver was designed and fabricated that integrated a photodetector and transistors. Photodetector layers, designed for absorption of 770 nm light, contained an AlGaAs cap layer to prevent any surface recombination of carriers; a thin GaAs absorption layer (312 nm) used to achieve high frequency response (greater than 40 GHz) through high electric field and soft carrier path; and Bragg reflector layers, to reflect unabsorbed light back into the absorption region. The whole detector layer was designed to maximize the optical signal absorption. (MM)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1995
- Accession Number
- ADA299547
Entities
People
- Jinwook Burm
- Joseph Ballantyne
- Kerry Litvin
- Lester F. Eastman
- Michael Leary
Organizations
- Cornell University