SIC Static Induction Transistors.

Abstract

SiC recessed gate static induction transistors (SITs) have been demonstrated for the first time. These early devices exhibit three times the power density of comparable silicon bipolar microwave devices at frequencies up to 500 MHz and exhibit efficient operation and high breakdown voltages. Key device fabrication processes developed in this program including reactive ion etching, Schottky gate metallizations, gate-source insulators and sharp epitaxial layer profiles.

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Document Details

Document Type
Technical Report
Publication Date
Jan 25, 1995
Accession Number
ADA299605

Entities

People

  • A. K. Agarwal
  • P. A. Orphanos
  • R. C. Clarke
  • R. R. Siergiej

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boundaries
  • Charge Carriers
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Etching
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Frequency Response
  • Materials
  • Metal-Semiconductor Junctions
  • Radar
  • Reactive Ion Etching
  • Semiconductors
  • Silicon Carbide
  • Transistors

Readers

  • Applied Combinatorial Optimization and Logic Circuit Design.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems