High-Density Plasma Source for Large-Area Chemical Vapor Deposition of Diamond Films.
Abstract
During this program Science Research Laboratory (SRL) and the Plasma Processing Group in the Department of Chemical Engineering at MIT are developing a large-area, directed plasma/atomic beam source for diamond deposition. The plasma source is based on an inductively-driven plasma accelerator that efficiently produces a high density (l0(exp 14-10(exp 17)/cu cm) plasma over an area of 0.1-1 square meters. The goal of this effort is to experimentally demonstrate the technical feasibility of employing the plasma source for high-throughput diamond deposition, through characterization of plasma parameters and preliminary diamond deposition experiments. A reactor design study will also be completed during Phase I, leading to an engineering design of a large-area plasma reactor for Phase II implementation. The period of performance is from 30 September 1994 to 29 May 1995. jg p.2
Document Details
- Document Type
- Technical Report
- Publication Date
- May 05, 1995
- Accession Number
- ADA299767
Entities
People
- Chen Xing