A New Diamond Emitter Device.

Abstract

The goal of the program is to produce and evaluate more efficient emitters using diamond semiconductor technology; and to propose use of electronic diamond technology in a phase II EBS (Electron Beam Semiconductor) device application. Accordingly, several samples of the rugged, type 6H SiC, high voltage EBS diode targets were obtained from Cree research. The SiC p-n junction diodes (20X2O mils) were evaluated on the PTS tektronix 576 curve tracer (fig. 11) and deemed suitable for use as reverse biased targets for the potential Phase II EBS device. These SiC devices have the potential to be more suitable as EBS targets than the Si diodes previously used. However, the small size will require paralleling until Cree can develop larger, defect free SiC crystals.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 10, 1995
Accession Number
ADA299808

Entities

People

  • John C. Driscoll

Tags

DTIC Thesaurus Topics

  • Chemistry
  • Copper Oxides
  • Crystal Structure
  • Crystals
  • Electron Beams
  • Electron Emission
  • Emission
  • Energy Bands
  • High Temperature
  • Materials
  • Measurement
  • Phase Diagrams
  • Raman Spectra
  • Semiconductors
  • Single Crystals
  • Solid State Physics
  • Vacuum Furnaces

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics