GaN Report for Additional Funding. Phase 2.
Abstract
The superior physical properties of gallium nitride (GaN) translate into a potentially very useful semiconductor material for various electronic and optical devices requiring a wide bandgap energy, high breakdown fields, high melting points, high thermal conductivity and high saturation velocities, etc. The recent breakthroughs in GaN-based materials (InGaN/GaN double heterojunction structure), such as commercially available blue LEDs, greatly enhanced the driving force of III-V nitrides, particularly GaN research due to its direct bandgap and promising optical properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 03, 1995
- Accession Number
- ADA299983
Entities
People
- A. Gurary
- C. Yuan
- R. A. Stall
- T. Salagaj