Theory and Simulation of a Field Emission: Analysis and Incorporation into Macroscopic Device Characterization.

Abstract

Field emitter array structures are under consideration as the gated electron source in inductive-output amplifiers currently being designed, due to the potential for spatio-temporal modulation at the cathode surface. Emission gating of electron beams places stringent demands on the cathode structures where modulation occurs. In spite of the intense interest generated by these structures, a simple analytical treatment of their properties has not been forthcoming. In this work, we present a simplified theory of a gated FEA triode geometry, describe a numerically intensive calculation of current-voltage characteristics and other properties, and describe a semi-numerical model that combines the features of both. The semi-numerical model is being developed as a more comprehensive device analysis tool to predict RF amplifier performance in determining FEA properties that best meet IOA objectives. (AN)

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Document Details

Document Type
Technical Report
Publication Date
Oct 12, 1995
Accession Number
ADA300376

Entities

People

  • B. Goplen
  • D. N. Smithe
  • E. G. Zaidman
  • K. L. Jensen
  • M. A. Kodis

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Electric Fields
  • Electromagnetic Fields
  • Electron Beams
  • Emission
  • Emitters
  • Experimental Data
  • Field Emission
  • Finite Element Analysis
  • Gaussian Distributions
  • Geometric Forms
  • Geometry
  • Radio Frequency Amplifiers
  • Simulations
  • Statistical Analysis
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Electronics Engineering
  • Software Engineering

Technology Areas

  • Directed Energy
  • Microelectronics