Double Superlattice GaAs IR Transistors.
Abstract
A superlattice structure can be incorporated into a quantum-well infrared detector as an electron bandpass filter to block electrons with energies higher or lower than the miniband energy. Electrons with energies inside the miniband can relax their energies to the lower edge of the miniband as they pass through the superlattice. Therefore, the superlattice not only filter the electron energy but also keeps the filtered electrons to a minimum energy. We have realized these expected advantages, greatly improved the detectivity of the device, and demonstrated the operation of a background limited IR transistor for T up to 90K. The research was carried out in these stages as described below.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 30, 1995
- Accession Number
- ADA300606
Entities
People
- D. C. Tsui
Organizations
- Princeton University