Low Defect SiC Material by Liquid-Phase Epitaxial Lateral Overgrowth.
Abstract
SiC epitaxial films are grown on SiC substrates using a relatively low-temperature liquid-phase epitaxy process. Liquid-metals (e.g., lead, tin, germanium, or other metals, or mixtures of these metals) are used as solvents for solution growth of SiC. The targeted growth temperatures are 1000 to 1200 deg C. The process is similar to conventional iqiud-phase epitaxy as commonly applied to growth of III-V heterostuctures. Next, having established a reproducible, low-temperature solution-growth technique for SiC, a process is developed whereby the SiC substrate is first masked prior to growth with a dielectric or refractory metal coating.The masking layer is patterned with stripe openings. A typical stripe pattern has 10-micron wide stripes on 100-micron spacings. The exposed SiC surfaces at the stripe openings serve as sites for preferential nucleation of SiC during a subsequent LPE step.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 29, 1994
- Accession Number
- ADA300689
Entities
People
- Michael G. Mauk