High Speed Heterostructure Transistors.

Abstract

The growth and characterization of the 111-V nitrides has been the focus of intense effort. A major problem plaguing nitride growth has been the absence of a good substrate to grow on. Currently sapphire and 6H-SiC are the substrates of choice for nitride growth with approximately equal results, although growth on sapphire yields slightly better results. We have addressed this problem in a fundamental and innovative way and given fresh insight into the considerations that must guide subsequent substrate development.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1995
Accession Number
ADA301117

Entities

People

  • Hadis Morkoç

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Boundaries
  • Classification
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • High Resolution
  • Materials
  • Sapphire
  • Security
  • Semiconductor Junctions
  • Substrates
  • Transistors
  • Valence Bands
  • X Rays

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design