Ion Doped Quantum Well Lasers.
Abstract
The objective of this research was to fabricate erbium doped diode lasers which were expected to be temperature independent, frequency stable sources of 1538 nm light optical communications. New metalorganic sources of erbium were developed that enabled metalorganic chemical vapor deposition (MOCVD) of Er:GaAs and AlGaAs structures with low levels of carbon and oxygen. Substitutional doping levels to over 10(exp 20) per cubic centimeter were demonstrated with good photo- and cathode-luminescence properties. LED's and diode laser structures were fabricated with erbium placed (a) so as to be pumped directly by electron hole pair recombination, and (b) by optical absorption at 980um. However, lasing at 1538nm was not observed in either case. The program did result in two commercial products: the erbium metalorganic source chemicals, and laser diode arrays with 980nm emission which can be used to pump erbium glass solid state lasers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 11, 1995
- Accession Number
- ADA301129
Entities
People
- Anton Greenwald