Modeling and Design of High Pressure Crystal Growth Processes.
Abstract
A mathematical model to simulate the low and high pressure crystal growth processes has been developed. The model accounts for both the melt and gas flows induced by buoyancy and capillary forces and by crystal and crucible rotations, radiation heat transfer from the melt and crystal surfaces, and the effect of the magnetic field. An efficient numerical scheme based on multizone adaptive grid generation and curvilinear finite volume flux discretization has been implemented to predict the interface shape and dynamics accurately. The effectiveness of the computer model (MASTRAPP) in solving phase change transport processes with deformable boundaries and moving interfaces has been demonstrated by performing simulations for a wide range of parameters for "one-step" in-situ synthesis and growth of indium phosphide crystals, a process being developed by the USAF Rome Laboratory. An innovative approach of coupled finite volume-finite element algorithm has also been developed to calculate the stresses in the growing crystal. Numerical results show a complex thermal interaction between the gas and the melt flows, and also indicate that the temperature fluctuations can be suppressed by the application of a magnetic field.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1995
- Accession Number
- ADA301278
Entities
People
- V. Prasad
Organizations
- State University of New York