The Quantum Hydrodynamic Model for Semiconductor Devices.

Abstract

Quantum semiconductor devices are playing an increasingly important role in advanced microelectronic applications, including multiple state logic and memory devices. To model quantum devices, the classical hydrodynamic model for semiconductor devices can be extended to include O(h-sq) quantum corrections. This proposal focused on theoretical and computational investigations of the flow of electrons in semiconductor devices based on the quantum hydrodynamic model. The development of efficient, rebute numerical methods for the QHD model in one and two spatial dimensions wa also emphasized.

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Document Details

Document Type
Technical Report
Publication Date
Feb 06, 1995
Accession Number
ADA301555

Entities

People

  • Carl L. Gardner

Organizations

  • Duke University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Computational Fluid Dynamics
  • Electronics
  • Electrons
  • Equations
  • Fluid Dynamics
  • Monte Carlo Method
  • Physics
  • Quantum Tunneling
  • Resonant Tunneling Diodes
  • Semiconductor Devices
  • Semiconductors
  • Shock Waves
  • Simulations
  • Three Dimensional
  • Tunnel Diodes
  • Voltage

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing