Silicon-Germanium-Carbon Alloys for Optoelectronic Devices (FY91 AASERT).
Abstract
This research resulted the growth on the growth of this new semiconductor alloys, silicon-germanium carbon, by the technique of molecular beam epitaxy (MBE). The alloys have been characterized by several techniques including Rutherford backscattering spectronietry (RBS) for composition, and Fourier transform infrared spectrometry (FTIR) for optical absorption. The Si%%%%%Ge%C% alloys were successfully grown using all solid sources for the Si, Ge and C. Substrates were 75 mm diameter (100) - oriented Si wafers, and alloy layer thicknesses ranged from 10 nm to 3 %m.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1995
- Accession Number
- ADA301934
Entities
People
- J. Kolodzey
Organizations
- University of Delaware