High Power, High Efficiency MESFETs and HEMTs.

Abstract

For the duration of the project dated above, the work on the AASERT program concentrated on improving the power performance of GaAs MESFETs with LTG GaAs surface passivation layers by studying the effects of source and drain contacts regrown by MOCVD on both device breakdown and gain.

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Document Details

Document Type
Technical Report
Publication Date
Jun 14, 1995
Accession Number
ADA301962

Entities

People

  • Umesh Mishra

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Energy and Power Technologies

Fields of Study

  • Engineering
  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.