Ion Doped Quantum Well Lasers.

Abstract

The objective of this research was to fabricate erbium doped diode lasers which were expected to be temperature independant, frequency stable sources of 1538 nm light optical communications. New metaloorganic sources of erbium were developed that enabled metaloorganic chemical vapor deposition (MOCVD) of Br:GaAs and AlGaAs structures with low levels of carbon and oxygen. Substitutional doping levels to over 10(exp20) per cubic centimeter were demonstrated with good photo- and cathode-luminesce properties. LED's and diode laser structures were fabricated with erbium placed (a) so as to be pumped directly by electron hole pair recombination, and (b) by optical absorption at 980nm. However, lasing at 1538nm was not observed in either case. The program did result in two commercial products: the erbium metaloorganic source chemicals, and laser diode arrays with 980 nm emission which can be used to pump erbium glass solid state lasers.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1995
Accession Number
ADA301963

Entities

People

  • Anton Greenwald

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemical Vapor Deposition
  • Frequency
  • Heat Energy
  • Laser Applications
  • Laser Diodes
  • Lasers
  • Materials
  • Measurement
  • Optical Absorption
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Solid State Lasers
  • Spectra
  • Spectroscopy
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Quantum Computing