Structural Characterization of Epitaxial Layers for Infrared Detectors.

Abstract

UHV/CVD is a growth technique highly suitable for deposition of Ge(x)Si(1-x) heterostructures for long-wavelength infrared detectors. We have used transmission electron microscopy to determine favorable conditions for the growth of these structures. Multiple quantum well structures can be grown with excellent quality without any evidence of nonplanar growth while heterojunction internal photoemission structures incorporated thicker Ge(x)Si(1-x) layers do exhibit nonplanar growth. A modest decrease in growth temperature to 550 deg C is sufficient to solve the problem. jg p.1

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Document Details

Document Type
Technical Report
Publication Date
Nov 02, 1995
Accession Number
ADA302057

Entities

People

  • D. W. Greve

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Detectors
  • Electronics Laboratories
  • Energy Bands
  • Germanium
  • Heterojunctions
  • Infrared Detectors
  • Low Temperature
  • Materials
  • Materials Science
  • Measurement
  • Measuring Instruments
  • Photoelectric Emission
  • Quantum Wells
  • Schottky Diodes
  • Semiconductors
  • Students

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing