Radiation Degradation Modeling of High-Efficiency GaAs/Ge Solar Cells,
Abstract
The performance modeling and predictions of the radiation degradation of solar cells is extremely important in designing a power system that will satisfy spacecraft requirements for an entire mission duration. High-efficiency GaAs/Ge solar cells are more efficient and more resistant to space-particle radiation than conventional Si solar cells, but a complete physical performance degradation model has not been developed that accurately predicts the GaAs/Ge solar-cell radiation degradation characteristics. The conventional minority-carrier diffusion length degradation model used to predict the performance of silicon solar cells does not accurately predict the observed GaAs/Ge solar cell performance degradation. A detailed radiation degradation modeling analysis examines why the conventional model does not accurately predict the performance degradation of GaAs/Ge solar cells and offers suggestions for a more accurate radiation degradation model. (AN)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1995
- Accession Number
- ADA302263
Entities
People
- L. C. Kilmer
Organizations
- The Aerospace Corporation