InAsP/InGaAs Materials Development for 2.1 Micrometers Avalanche Photodiodes. Phase 2.

Abstract

The overall technical objective of this program is to advance the state-of-the-art of InAsP/InGaAs materials development so that 2.1 micrometers APDs which presently do not exist and offer ten times the light detection sensitivity of anything now available can be made.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1995
Accession Number
ADA302997

Entities

People

  • Alvin Goodman
  • Gregory H. Olsen

Tags

Communities of Interest

  • Advanced Electronics
  • Human Systems
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Detection
  • Detectors
  • Diameters
  • Diodes
  • Gain
  • Materials
  • Measurement
  • Military Research
  • Noise
  • Optical Detection
  • Phase
  • Photodiodes
  • Small Business
  • Vapor Phases

Fields of Study

  • Physics

Readers

  • Munitions and Ordnance Engineering
  • Optical Physics and Photonics.
  • Systems Analysis and Design

Technology Areas

  • Directed Energy