Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Abstract
Electron emission has been observed on three types of diamond samples: films deposited on both Si(100) wafers and on individual Mo tips via plasma chemical vapor deposition (CVD) and also on the Mo tips via dielectrophoresis of diamond powder. In the first sample type, ultraviolet photoemission spectroscopy showed that the samples exhibited a negative electron affinity after exposure to a hydrogen plasma. Secondary electron emission yields varied from 2.2 to 9.2. Field emission current-voltage measurements showed threshold voltages ranging from 28 to 84 V/micrometers and effective emission barrier heights from 0.15 to 0.33 eV. The film with the highest secondary yield also exhibits the lowest emission threshold. In the last two sample types, transmission and scanning electron microscopies revealed a significant amount of diamond on the tips of the Mo emitters. The field emission characteristics were investigated before and after diamond deposition. The CVD diamond coated emitters exhibited a significant increase in emission current. A possible mechanism to explain the current enhancement by diamond powder coated Mo emitters has been presented. jg p2
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1995
- Accession Number
- ADA303115
Entities
People
- J. T. Glass
- P. K. Baumann
- Robert F Davis
- Robert J. Nemanich
- Zlatko Sitar
Organizations
- North Carolina State University