PSPICE Simulation of Total Dose Effects on Composite and Single Operational Amplifiers.

Abstract

In this research, continuing evidence that composite operational amplifiers perform better than single amplifiers in both gain bandwidth product and slew rate is presented through an approach of using computer simulation to predict ionizing radiation degradation. This technique examines the use of varying transistor parameters within PSPICE modeled composite and single operational amplifier circuits in order to simulate ionizing radiation. A comparison of the results of this simulation with those of previous research, in which composite and single operational amplifiers were irradiated with a LINAC, verifies that this simulation technique provides a reasonable prediction of a response to ionizing radiation for circuits comprised of radiation hardened components. And, in the process of validating this technique, these simulation results verify that composite operational amplifiers offer an improved bandwidth and a faster slewrate compared to single operational amplifiers.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1994
Accession Number
ADA303541

Entities

People

  • Rebecca L. Baczuk

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Beta Particles
  • Bipolar Junction Transistors
  • Digital Circuits
  • Electrons
  • Field Effect Transistors
  • Gamma Rays
  • Ionization
  • Ionizing Radiation
  • Materials
  • Modules (Electronics)
  • Nuclear Reactors
  • Power Electronics
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Thermonuclear Reactions
  • Transistors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Semiconductor Device Technology