InGaAsP Diode Laser for Nd:YAG Pumping.

Abstract

The main objective of this contract under ARPA/US Army #1)DAAH-04-93-G-0044 is to develop and demonstrate 0.8 micrometer high power laser based on InGaAsP material system for pumping of Nd:YAG lasers. In order to achieve this goal there are three major considerations: (1) growth and fabrication of GaInAsP/GaAs heterostructures lasers, (2) packaging and device testing, and (3) the reliability assessments of these structures. This report summarizes the results of experimental research work that the Center for Quantum Devices have accomplished under this contract. jg p6

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1996
Accession Number
ADA303876

Entities

People

  • M. Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Chemistry
  • Distributed Feedback Lasers
  • Energy Bands
  • Fermi Levels
  • Laser Applications
  • Laser Diodes
  • Laser Science
  • Lasers
  • Light (Electromagnetic Radiation)
  • Optical Properties
  • Optics
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing