Materials and Device Research for High-Speed Integrated Optoelectronic Transmitters Using Vertical-Cavity Surface-Emitting Lasers.

Abstract

This research was conducted in order to investigate and realize the monolithic integration of an InGaAsP/InP surface emitting LED Double Heterojunction Light Emitting Diode (DH) with an entire process of the research: design, growth, fabrication, characterization, and result analysis. The highlighted features of the system are its monolithic integration, surface emitting optical device design (LED in this case), and lateral, rather than a vertical, coupling of the LED and the HBT. The InGaAsP quaternary active layer of the LED is designed to operate at lambda = 1.55 micrometers, which coincides with the lowest dispersion wavelength of silica optical fibers. Such an integrated structure is a prototype of an LED optical transmitter, which can be widely used in telecommunication and control applications. jg

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Document Details

Document Type
Technical Report
Publication Date
Jan 18, 1996
Accession Number
ADA303893

Entities

People

  • Russell D. Dupuis

Organizations

  • University of Texas at Austin

Tags

DTIC Thesaurus Topics

  • Communication Systems
  • Couplings
  • Diodes
  • Dispersions
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Fibers
  • Heterojunctions
  • Lasers
  • Light Emitting Diodes
  • Material Forming Processes
  • Materials
  • Materials Processing
  • Optical Fibers
  • Surface Emitting Lasers
  • Transmitters

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics