Optoelectronic Applications of Wide-Band Gap II-VI Semiconductors.

Abstract

A continued study to demonstrate the viability of growth of LED and laser diode structures on ZnSe substrates as compared with heteroepitaxial growth of II-VI structures on GaAs substrates. Other key issues that were to be addressed included p-type doping of ZnSe using nitrogen plasma sources and the ohmic contact problem for p-type ZnSe. jg p1

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 24, 1996
Accession Number
ADA303997

Entities

People

  • J. F. Schetzina

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Compound Semiconductors
  • Crystals
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Laser Diodes
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Optical Properties
  • Optics
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics