Superconductivity in Low-Temperature Grown III-V Thin Films.
Abstract
In this AASERT project, two graduate students of the University of California, Berkeley, studied the electronic properties of various low-temperature grown III-V thin films using both optical and electrical characterization techniques. Very early on, the previously found superconductivity effect could be ascribed to inclusions of group-III elements that were not related to the low-temperature growth conditions. The results found here indicate that the anion antisite, As( sub Ga) dominates the properties of LT-GaAs. This finding will allow future improvements in LT- GaAs by designing optimized concentrations of As( sub Ga) related deep levels for specific applications. In LT-AlGaAs, the very deep arsenic antisite level leads to the formation of layers with very high resistivity. In LT-InP and possibly in LT-InAlAs the energy location of the anion antisite defects) prevents the formation of highly resistive, undoped layers. With MCDA we were able to directly prove that LT InP is highly n-type due to P( sub In) antisite defects, and to suggest which transitions form the magnetic circular dichroism spectrum for this defect. jg p1
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1996
- Accession Number
- ADA304269
Entities
People
- Eicke R. Weber
Organizations
- University of California, Berkeley