Investigation of Normal Incidence High-Performance P-type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors.

Abstract

The objective of this project is to perform theoretical and experimental studies of dark current, photocurrent, optical absorption, spectral responsivity, noise, and detectivity for the normal incidence strained layer p-type III-V semiconductor quantum well infrared photodetectors (QWIPs) developed under this program. The material systems under investigation include InGaAs/InAlAs on InP substrates and GaAs/InGaAs or AlGaAs/InGaAs on GaAs substrates. The project will study the usage and effects of biaxial tension and compressional strain on the material systems and their effects towards photodetector design. jg

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1996
Accession Number
ADA304516

Entities

People

  • Jerome T. Chu
  • Shengsan Li

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Structures
  • Conduction Bands
  • Crystal Lattices
  • Detection
  • Detectors
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • Ground State
  • Long Wavelengths
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductors
  • Thermionic Emission
  • Transitions
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing