N-Type SiC Rectifying Junctions for High Power, High Temperature Electronics.

Abstract

A new metal demonstrated to form ideal rectifying Schottky diode junctions to n-type SiC, and further, not to limit the thermal and power density capability of SiC devices and circuits in any way The following properties were demonstrated between kT and 1050 C: (1) metal does not spall, peel or scratch, (2) metal/n-SiC junction remains abrupt, (3) I-V unchanged by thermal exposure, (4) barrier height = 1.78 +/- 0.1 eV.

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Document Details

Document Type
Technical Report
Publication Date
Feb 27, 1996
Accession Number
ADA304866

Entities

People

  • James D. Parsons

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes
  • Sensors

DTIC Thesaurus Topics

  • Abstracts
  • Band Structures
  • Chemical Reactions
  • Conduction Bands
  • Diodes
  • Electrical Properties
  • Electronics
  • Energy Bands
  • High Temperature
  • Measurement
  • Mechanical Properties
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Readers

  • Mathematics or Statistics
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics