Low Temperature Synthesis of Semiconductor Materials.

Abstract

This report summarizes the significant results obtained during the three period of this grant. Support for this project resulted in several major new developments in the synthesis of materials with a broad range of semiconducting and optoelectronic properties. Binary and ternary materials of Groups 14-16, 13-15, and 12-16 can now be prepared in bulk or as thin films from readily prepared single source precursors at moderate temperatures (190 -450 degrees C) as opposed to the more typical preparations at 800 - 1000 degrees C. The precursors developed under this grant feature phenyl, benzyl and allyl groups and have numerous advantages over the conventional alkylated analogues among which are lower toxicity, faster decomposition times and lower contamination of target products. jg p1

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Document Details

Document Type
Technical Report
Publication Date
Sep 14, 1995
Accession Number
ADA305587

Entities

People

  • Philip Boudjouk

Organizations

  • North Dakota State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Analogs
  • Chemical Synthesis
  • Chemistry
  • Contamination
  • Dissociation
  • Elements
  • Fatty Acids
  • Films
  • Gallium
  • Gallium Arsenides
  • Inorganic Chemistry
  • Low Temperature
  • Materials
  • Metals
  • Precursors
  • Semiconductors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Polymer Science and Technology
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene