Use of Electroreflectance to Characterize Materials with a View to Predict Device Performance.
Abstract
The work performed under this contract was centered on the optical characterization of semiconductor heterojunctions, multiple-layered structures and heavily doped. This concentration on semiconductor structures of great importance for device applications was began in the second half of our previous contracts. Because of the shift from the measurement of optical data around the E1 and E1+A1 critical points of bulk materials or optically thick films to the measurement of data around E0 and E0+A0 on complex structures, entirely new theoretical approaches and computer programs were required for the analysis of the data. Four new approaches to the data were developed, one of which involved a new basic theory. This work enabled us to determine from electroreflectance data the detailed band profile of ZnSe/GaAs heterojunctions, including the band offset and the magnitude and range of the ZnGa inter-diffusion. Another major accomplishment was the accurate measurement of the band offset of Ga As/GahiP quantum wells and superlattices, which involved the observation and identification of 29 different optical transitions. A new experimental technique, vacuum electroreflectance, was used to study high-doped GaAs, which resulted in a new theory of photoreflectance and contactless electroreflectance. This contract resulted in 22 publications including 6 Ph.D. theses. (AN)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 27, 1996
- Accession Number
- ADA305644
Entities
People
- James W. Garland
Organizations
- University of Illinois at Chicago