Charge Trapping and Built-in Field Studies in Electroreflectance of a UN(+) GaAs Structure,

Abstract

A form of contactless electroreflectance, vacuum electroreflectance (VER), is used to quantitatively compare photoreflectance (PR) to electroreflectance (ER). It is found that the amplitude of the VER signal for a given applied modulation taken under CW laser illumination drastically decreases with increasing laser intensity. This new effect is studied as a function of frequency, and is explained in terms of the screening of the AC applied field by the surface charge, due to the presence of extra charged carriers in the depletion region. This effect is not present in contact forms of ER. It is also shown from a systematic comparison of PR and VER data that even for the lowest laser intensities which give an observable PR signal, the nature of the modulation in PR lowers the measured built-in field by an amount well outside the uncertainties in the determination of the field. jg

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1994
Accession Number
ADA305697

Entities

People

  • B. R. Bennett
  • J. W. Garland
  • S. L. Mioc

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplitude
  • Buildings And Structures
  • Charge Density
  • Current Density
  • Electric Fields
  • Electron Transfer
  • Fermi Levels
  • Frequency
  • Helium Neon Lasers
  • Illumination
  • Intensity
  • Lasers
  • Measurement
  • Modulation
  • Semiconductors
  • Square Waves
  • Waves

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology
  • Snow Cover Descriptors for Reptiles and Their Illustrations.

Technology Areas

  • Directed Energy