Research on Laser Damage Threshold of Photoelectric Detectors,

Abstract

The perpetual laser damage effects of silicon PIN photoelectric diodes and silicon avalanche photodiodes irradiated by a laser of 1. O6um or 0.53um wavelength are studied. The laser damage thresholds of the detectors are experimentally measured. The main reason of causing the perpetual damage are the laser heat singe on the PN connect of photoelectric diodes. The damage thresholds are relative to the laser wavelength, pulse width and the photodiod structure.

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Document Details

Document Type
Technical Report
Publication Date
Feb 13, 1996
Accession Number
ADA306437

Entities

People

  • Chen Dezhang
  • Zhang Chengquan

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Avalanche Photodiodes
  • Coefficients
  • Detectors
  • Diodes
  • Distribution Functions
  • Electric Fields
  • Energy
  • Equations
  • Heat Energy
  • Laser Damage
  • Laser Pulses
  • Lasers
  • Materials
  • Melting Point
  • P-N Junctions
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Educational Psychology
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy