Research on Laser-Damage Threshold of Photoelectric Detectors,
Abstract
Permanent laser-damage effects in silicon PIN photoelectric diodes and silicon avalanche photodiodes irradiated with a l.06 micrometer or an 0.53 micrometer laser are studied. The laser-damage thresholds of the detectors are experimentally measured. The mean reason for causing permanent damage includes latent heat scorching at the PN junction of the photoelectric diodes. The damage thresholds are dependent on wavelength, pulse duration, and photodiode structure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 21, 1996
- Accession Number
- ADA306467
Entities
People
- Chen Dezhang
- Zhang C. Quan
Organizations
- National Air and Space Intelligence Center