Damage Mechanism of InSb Detectors (PV) When Laser-Irradiated,

Abstract

The damage mechanisms of InSb detectors (PV) when laser-irradiated are investigated. It is pointed out that the laser damage degrades the p-n junction locally, which has effects similar to those of a parallel resistance on device performance. Various experimental phenomena are explained. The calculated values closely fit the experimental data. This model can also explain the 'flash' effects, i.e., the InSb (PV) detector may have better performance after irradiation with intense light.

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Document Details

Document Type
Technical Report
Publication Date
Mar 14, 1996
Accession Number
ADA306480

Entities

People

  • Jiang Zhiping
  • Lu Qisheng

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Intelligence
  • Damage
  • Detectors
  • Electric Current
  • Experimental Data
  • Laser Damage
  • Lasers
  • Materials
  • Microfiche
  • Optical Absorption
  • P-N Junctions
  • Photochemical Reactions
  • Pulsed Lasers
  • Resistance
  • Simulations
  • Voltage

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy