Field Emitter Array RF Amplifier Development Project. Phase 1, Option 1.
Abstract
The program goals of > 5 mA total anode current at current density of > 5 A/cm2 were achieved with a 1,197 tip array. Single tip devices from two separate wafers operated at > 1 microA for over 24 hours. Successful electrical testing was performed on a 44,460 tip array. The in-house DC testing program has evaluated an average of 2.5 devices per workday since July 30, 1993. Out of 139 devices tested, 63 or 45% produced acceptable anode current at gate voltage below 250 V. Refinements continue at various steps in the process flow. More rigorous uniformity requirements have resulted in modification of the initial photolithography steps. Various gate metal systems are being tested to maximize device test performance. Development of low work function and metal coatings has focused on the optimization of the deposition process for tantalum nitride, and the development of processes for lanthanum hexaboride and zirconium carbide. The chemical composition, resistivity, and growth rate of the films is being analyzed. Theoretical calculations of the emission area and field enhancement factor for field emitter arrays were made using data collected from devices tested at MCNC. The resulting data compared favorably with a priori simulation results.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1993
- Accession Number
- ADA306615
Entities
People
- Gary E. Mcguire
- W. D. Palmer