Si Wires in SOI Configuration.
Abstract
Si is a poor luminescent material in comparison with direct bandgap semiconductors such as GaAs, or InP. Thus, the room temperature photoluminescence (PL) from porous Si (pi-Si) has attracted a great deal of attraction (1). Although Pickering et al. (2) had previously reported on PL from pi-Si attributing it to a complex mixture of phases, i.e., alpha-Si:O (and/or alpha-Si:H), the interpretation by Canham and Lehman et al. (3) in terms of quantum-confinement effects has stimulated intense research efforts aimed at a comprehensive understanding of the underlying physical mechanisms. To date, however, a clear picture has yet to emerge.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 18, 1996
- Accession Number
- ADA307139
Entities
People
- Saleem H. Zaidi