Diffusion-Bonded Nonlinear Materials for Practical Quasi-Phase-Matched Mid-IR Devices.

Abstract

This report summarizes research on the application of diffusion bonded GaAs for high power quasiphase matched nonlinear frequency conversion in the infrared (IR). Research focused on development of material processing methods. Microstructural, microchemical and optical characterization techniques were employed to analyze the nature of defects found at the wafer interfaces, and within the bulk material; strategies for minimizing them were developed. The resulting advances in processing technology reduced mid-IR optical losses in diffusion bonded GaAs stacks by over an order of magnitude, to less than 0.2% per interface. This is within the range required to make practical pulsed nonlinear infrared devices such as CO2 doublers. Further reductions in optical losses, required for high average power cw IR applications, appear possible.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1996
Accession Number
ADA307177

Entities

People

  • Robert L. Byer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbon Dioxide Lasers
  • Chemistry
  • Crystal Lattices
  • Lasers
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Mechanical Properties
  • Nonlinear Optics
  • Optical Materials
  • Optical Properties
  • Optics
  • Optoelectronic Devices
  • Refractive Index
  • Semiconductor Lasers
  • Semiconductors
  • Single Crystals

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Thin Film Deposition Science.