Electrical and Optical Characterization of Silicon Carbide-Polytypes with Respect to High-Field Device Applications.
Abstract
With regard to the purpose of this project focusing on the suitability of SiC for high field device applications, material properties like the degree of ionization of different shallow dopants (especially p-type dopants) at device operating temperatures, the possibility of impact ionization of intrinsic and extrinsic energetically deep defect centers as well as the high field carrier mobility of both electrons and holes had to be considered.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1996
- Accession Number
- ADA307264
Entities
People
- Gerhard Pensl