High-Efficiency AlInGaP Visible Vertical Cavity Surface- Emitting Lasers Incorporating Wafer Fusion and Improved Heat Sinking. Phase 1.
Abstract
Red vertical cavity surface emitting lasers (VCSELs) using aluminum indium gallium phosphide (AlInGaP) based active regions are limited in performance by thermally activated carrier leakage, and absorption in aluminum gallium arsenide mirrors. This program seeks to improve performance by flip-chip bonding for better heat sinking. This requires wafer fusion to gallium phosphide substrates. We also improve device efficiency by lateral oxidation. Lastly, we investigate alternative mirror combinations which are transparent to shorter wavelengths.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 23, 1996
- Accession Number
- ADA307304
Entities
People
- Vijaysekhar Jayaraman