Characterization Equipment to Enhance Development of Group III Nitride. DURIP-94.
Abstract
This equipment has played a vital role in our development of wide-gap GaN and related AlInGaN alloy semiconductors that are rapidly finding application in optoelectronic and high temperature devices. In particular, the high resolution X-ray diffractometer has enabled us to understand how the thin, low-temperature buffer layer, that is grown before the main III-N epilayer, controls the crystallinity of the epitaxial film. The 244 nm laser is being used as a pump laser for III-N materials and in combination with the XRD system is providing a rapid measure of alloy composition and crystal quality. These measurements are beginning to reveal important information concerning the stability of indium containing III-N alloys, that will have a major impact on heterostructure design.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1996
- Accession Number
- ADA307667
Entities
People
- Stephen D. Hersee
Organizations
- University of New Mexico