Ultrafast Phase Modulators and Semiconductor Laser Devices at 1.3 microns.

Abstract

A transmission up conversion system was built, which consisted of a tunable mode locked Ti: Sapphire laser and a tunable continuous wave Cr:Forsterite laser. The system has 100 femtosecond time resolution near 1/3micrometer wavelength, limited only by the mode locked Ti:Sapphire laser pulse width. With the transmission up conversion system, we observed 5 picosecond carrier capture time in GaInAlAs (11nm)/InAlAs multiple quantum wells (MQWs) at 77K. The continuous wave Cr:Forsterite laser was also used to measure the phase modulation by a current. The maximum 5 pi phase shift was observed through the 200micrometer long InGaAs/InAlAs MQW laser diode.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1996
Accession Number
ADA307741

Entities

People

  • N. Peyghambarian

Organizations

  • University of Arizona

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Continuous Waves
  • Electronics Laboratories
  • Femtosecond Time
  • Laser Diodes
  • Laser Pulses
  • Lasers
  • Light (Electromagnetic Radiation)
  • Light Sources
  • Modulation
  • Phase Modulation
  • Phase Modulators
  • Phase Shift
  • Quantum Wells
  • Refractive Index
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing