Ultra-Sensitive and Quantitative Profiling and Imaging of Dopants and Impurities in Semiconductors,

Abstract

We have built a new analytical time-of-flight (TOF) instrument capable of sputter-initiated resonance ionization microprobe (SIRIMP) measurements. This instrument has the ability to obtain quantitative element concentration depth profiles and images with very high depth resolution and virtually no matrix effects. The SIRIMP technique is especially valuable for ultratrace element analysis in samples where the complexity of the matrix is a serious source of interferences. p1

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1995
Accession Number
ADA308036

Entities

People

  • C. F. Joyner
  • H. F. Arlinghaus
  • J. Tower
  • Sercan Şen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Contamination
  • Dynamic Range
  • Elements
  • High Energy
  • Inclusions
  • Ion Beams
  • Ionization
  • Ions
  • Laser Beams
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Measurement
  • Silicon
  • Silicon Carbide
  • Trailing Edges

Readers

  • Analytical Chemistry
  • Geodesy
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems