Strain Characterization of AsH3 Induced Exchange Reactions in InP Grown by OMVPE.
Abstract
Behavior of As-P intermixing in heterojunctions of As-compounds grown on InP (001) has been inferred from strain of very thin mis-matched layers inserted periodically in InP to form multilayer superlattice structures. Strain components are observed for both As-P exchange in the InP and from inserted layer growth. The data suggest that for As-compounds grown on an InP surface the availability of As for both layer growth and As-P exchange is rate-limited, most likely by surface kinetics, and an optimum growth rate occurs for minimizing the As-P exchange. There is also a fixed InAs strain component inherent to interfaces of As-compounds on InP. Monolayer thickness layers of AlP or GaP grown on the InP to change the surface chemical bonds are shown to reduce the As-P exchange somewhat but they do not stabilize the InP surface against exposure to AsH3. H2 and PH3-exposures of the As-terminated surface show that P-As exchange to desorb the As is slow compared to As adsorption on InP by AsH3 exposure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1996
- Accession Number
- ADA308881
Entities
People
- A. R. Clawson
- C. M. Hanson
Organizations
- Naval Command, Control and Ocean Surveillance Center