Circuits and Devices for High-Speed Instrumentation.
Abstract
In this report we detail the development of a GaAs based RID that outperforms all other GaAs based RTD devices and many other devices in more exotic materials systems with >3OOkA/cm2 peak current density at 1.2V. This result was achieved by using a strained InGaAs well to increase peak current density while the valley current was kept low (>2:1 peak to valley ratio) by achieving smooth InGaAs/AlGaAs interfaces through the use of on orientation MOCVD growth. Circuits were designed and simulated using the measured parameters of the fabricated devices including an RTD driven sampling gate and an RTD based digital time delay. These two circuits form the basic building blocks of time interval measurement and multichannel sampling systems. A planar transformer was devised to allow the low - about 1 V - output of the RTD to drive a 4 or 6 diode sampling bridge Through the successful fabrication and circuit simulation based demonstration of device performance, we have shown the feasibility of measurement instruments based on this technology.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 24, 1996
- Accession Number
- ADA309709
Entities
People
- All Mirabedini
- D. Botez
- Robert A. Marsland