A Study of a New Approach to Low Temperature Oxidation of Germanium Silicon Alloy Material and its Characterization.
Abstract
The study of the oxidation of Si-Ge alloys was successfully completed with the active collaboration of P.E. Thompson at the Naval Research Laboratory. A number of publications and talks resulted, in addition to two Ph.D. theses and one Master's degree. The work was accomplished as a three part study involving: (1) A UHV, XPS and AES study of the very early stage of oxidation (<10A). (2) A low temperature conventional (fluorine added) oxidation. (3) Electrical characterization by MOS technologies of implanted Ge. In Part 1, oxidations were carried out under ultra high vacuum conditions in a Scientia ESCA300. Under these conditions, a systematic study of suboxides formed in situ at low temperatures was made. Attention was given to the conditions under which all SiO2 or mixed SiO2-GeO2 resulted. In Part 2, chemically enhanced oxidation (by fluorine) was undertaken in the temperature range of 600 deg - 800 deg C. The chemically enhanced oxides at 600 deg C were found to be mixed SiO2-GeO2 oxides by XPS and SIMS measurements. Electrical characterization of these oxides was also carried out. In Part C, work was performed on the role of Ge at the SiO2 interface which resulted in obtaining understanding and quantification of implanted Ge and its role in hot carrier performance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 04, 1996
- Accession Number
- ADA309817
Entities
People
- Donald R Young .
- Ralph J. Jaccodine
Organizations
- Lehigh University