Investigation of Radiation Effects in Microelectronics.
Abstract
Electronic components implemented in space borne and military applications are often required to operate in a hostile radiation environment, and are therefore subject to the degradation and failure mechanisms associated with such environments. This report discusses radiation effects research in the areas of (1) single event burnout of power MOSFETs (2) single event gate rupture of power MOSFETs; (3) total dose degradation of power MOSFETs (including mobility degradation, cryogenic operation, 1/f noise, and termination structures); and (4) total-dose gain degradation of bipolar junction transistors. Experiment details and modeling and simulation results are given in these areas. This work is intended to (1) facilitate selection of appropriate components for radiation environments; (2) provide design techniques to improve the radiation hardness of power MOSFETs and bipolar junction transistors; and (3) advance the technical base with new physical insights in radiation effects in microelectronics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1996
- Accession Number
- ADA310337
Entities
People
- Gregory H. Johnson
- Kenneth F. Galloway
- Ronald D. Schrimpf
Organizations
- University of Arizona