Visible Light Emitting Materials and Injection Devices.
Abstract
Progress in report on research into ZnSe-based and GaN-based materials and devices for light emitting diodes and diode lasers at blue-green visible wavelengths. II-VI Work. Our recent activities in the II-VI area have focused on stacking fault density reduction in ZnSe epilayers and the attached manuscript (see Appendix 1), which has been submitted to Applied Physics Letters (4/18/96), summarizes our recent results. This work is also supported in part by the II-VI Consortium. Further optimization of deposition parameters tor tne growth of cubic-GaN on MgO has resulted in the production of higher quality material as evidenced by the low-temperature PL spectrum shown in Fig. 1.1. As can be seen from the spectrum, a relatively sharp peak is dominant at 3.28 eV (at 21.5K). p1 and p4
Document Details
- Document Type
- Technical Report
- Publication Date
- May 31, 1996
- Accession Number
- ADA310635
Entities
People
- Cammy Abernathy
- Joseph Simmons
- Kevin R. Jones
- Paul H. Holloway
- Robert Park
Organizations
- University of Florida