Thin-Layer Electrochemical Studies in the Development of a Cycle for the Formation of CdInSe2 by Electrochemical ALE.
Abstract
A thin-layer electrochemical cell (TLEC) was used in the development of a method for the electrodeposition of CuInSe2. Underpotential deposition (UPD) of atomic layers of Cu, In, and Se, as well as layers of Cu2Se, InSe and InSe2 was performed. However, extension of layers of CuInSe2 proved significantly more difficult due to differences in stability of Cu and In. A complexing agent was used to adjust the activity of the Cu, forcing its formal potential to more negative values. The UPD behavior of Cu on an atomic layer of Se, however, appeared to be significantly impeded by the presence of the complexing agent The information obtained in this study is intended to facilitate the development of an Electrochemical ALE cycle for the deposition of CuInS2. Future work will involve studies using an automated flow cell deposition system.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 22, 1996
- Accession Number
- ADA310785
Entities
People
- John L. Stickney
- Robert D. Herrick Ii
Organizations
- University of Georgia