Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

Abstract

Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4/H2/Ar gas mixtures. Etch rate was determined as a function of gas composition, power density (0.4-1.0W/cm2), pressure (6-25 mTorr), and total flow rate (20-40 sccm). Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for several anneal temperatures (3000C, 4000C).

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1996
Accession Number
ADA310955

Entities

People

  • George F. Mclane
  • Paul Cooke
  • Robert P. Moerkirk

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Etching
  • Fabrication
  • Flow Rate
  • Hydrogen
  • Magnetrons
  • Manufacturing
  • Reactive Ion Etching

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology