Silicon Crystal Heating and Thermocouple Mounting Designs.
Abstract
New mounting methods for a silicon crystal and a thermocouple are described. The sample mounted in this design produced a very uniform temperature distribution when resistively heated. Deviations between the silicon temperature and the mounted thermocouple temperature have been measured. Metal contamination on the surface of the sample mounted with a thermocouple by the new methods was found to be below the detection limit of Auger electron spectroscopy. In addition, the emissivity data at 0.65 micrometers for silicon as a function of temperature has been fitted to a useful equation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 12, 1996
- Accession Number
- ADA310973
Entities
People
- H. Nishino
- V. A. Ukraintsev
- Wenjie Yang
- Wolfgang J. Wolfgang J. Choyke
- Z. Dohnalek
Organizations
- University of Pittsburgh