Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization.
Abstract
The growth parameter, alpha, the ratio of the growth rates on (100) and (111) facets for diamond films deposited on Si and Ti by microwave plasma CVD has been studied using SEM micrographs. Different morphologies were generated on Si under different deposition conditions. The value of alpha increased with increasing temperature and increasing methane concentration, as expected. A value of alpha for Ti was not obtained due to the heavily twinned particles. Violet/blue photoluminescence from epitaxial cerium dioxide films on Si substrates was observed for the first time. The films were deposited on Si(111) substrates under UHV conditions using pulsed laser ablation of a cerium oxide target. They were rapid thermally annealed in argon, and excited by a He-Cd ultraviolet laser of 325 nm wavelength. The emission might be due to charge transfer transitions from the 4f band to the valence band of CeO2. Growth of Si on nearly lattice matched CeO2/Si(111) substrates for silicon-on-insulator (SOI) applications is reported. A low pressure chemical vapor deposition (LPCVD) growth technique was employed using 1% disilane in N2 to deposit silicon at 700 and 750 deg C on single crystal CeO2 films deposited under UHV conditions in the same growth apparatus. The RHEED patterns obtained and the surface morphology of the grown films indicated a three-dimensional mode of crystal growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1996
- Accession Number
- ADA311027
Entities
People
- N. A. El-masry
- Robert F Davis
- S. K. Han
- Sarah S. Bedair
- Zlatko Sitar
Organizations
- North Carolina State University