Low Temperature Epitaxial Growth of Rare Earth Doped Si.
Abstract
Epitaxial Si films doped with high concentrations (10(exp 19)/cu cm) of the rare earth element Er have been deposited. The deposition technique used was low temperature plasma enhanced chemical vapor deposition with an electron cyclotron resonance source. The deposition temperatures were below 500 deg C to avoid formation of erbium silicide which is optically inactive. The growth process for undoped samples was developed to the point that good quality epitaxial material could be obtained on demand. Some work was done investigating the concept of limited epitaxial thickness. Four different metal organic Er precursors were tried and the greatest success was found determine (bis trimethyl silyl amido) Er (III). A designed experiment was performed to the most important process conditions required to maximize the photoluminescence emission. Reasonably intense photoluminescence emission has been obtained, comparable to the level obtained by other groups, yet no absolute intensity calibration is currently available. Chemical analysis of the films was performed with both SIMS and RBS. The films do contain some carbon contamination, but the current thinking that this acts to reduce the lattice constant in the vicinity of the optical center and reduces the creation of crystalline defects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 05, 1996
- Accession Number
- ADA311174
Entities
People
- Walter Varhue
Organizations
- University of Vermont